Electronic device

ABSTRACT

An electronic device is provided. The electronic device includes a first substrate, a second substrate, a liquid crystal layer, a feeding structure, and a plurality of phase shifter electrodes. The liquid crystal layer is disposed between the first substrate and the second substrate. The feeding structure is disposed on the first substrate to transmit a radio frequency signal. The plurality of phase shifter electrodes are disposed on the first substrate and at least one of the plurality of phase shifter electrodes is for receiving the radio frequency signal. In addition, at least one of the plurality of phase shifter electrodes is electrically connected to a thin film transistor.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority of Chinese Patent Application No.201910603673.9, filed on Jul. 5, 2019, the entirety of which isincorporated by reference herein.

BACKGROUND Technical Field

The present disclosure relates to an electronic device, and inparticular it relates to an electronic device having a phase shifterelectrode controlled by an active driving element.

Description of the Related Art

Recently, some of the electronic products can be used as electronicmodulation devices, for example, as antenna devices that can modulateelectromagnetic waves. However, the current antenna devices have notbeen satisfactory in all respects. For example, in antenna arrays wherethe phase shifter electrodes are controlled by passive driving elements,there may be problems of circuits coupling or short circuits.

Therefore, the development of an antenna device that can effectivelymaintain the stability or the operation reliability for modulatingelectromagnetic wave is still one of the goals that the industry iscurrently aiming at.

SUMMARY

In accordance with some embodiments of the present disclosure, anelectronic device is provided. The electronic device includes a firstsubstrate, a second substrate, a liquid crystal layer, a feedingstructure, and a plurality of phase shifter electrodes. The liquidcrystal layer is disposed between the first substrate and the secondsubstrate. The feeding structure is disposed on the first substrate totransmit a radio frequency signal. The plurality of phase shifterelectrodes are disposed on the first substrate and at least one of theplurality of phase shifter electrodes is used to receive the radiofrequency signal. In addition, at least one of the plurality of phaseshifter electrodes is electrically connected to a thin film transistor.

A detailed description is given in the following embodiments withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be more fully understood by reading the subsequentdetailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1A is a top-view diagram of an electronic device in accordance withsome embodiments of the present disclosure;

FIG. 1B is an enlarged diagram of a portion of an electronic device inaccordance with some embodiments of the present disclosure.

FIG. 1C is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIGS. 2A-2D are cross-sectional diagrams of an electronic device duringthe manufacturing process in accordance with some embodiments of thepresent disclosure;

FIG. 3 is a top-view diagram of an electronic device in accordance withsome embodiments of the present disclosure;

FIG. 4 is a top-view diagram of an electronic device in accordance withsome embodiments of the present disclosure;

FIGS. 5A-5D are top-view diagrams of phase shifter electrodes of anelectronic device in accordance with some embodiments of the presentdisclosure;

FIG. 6 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 7 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 8 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 9 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 10A is a top-view diagram of an electronic device in accordancewith some embodiments of the present disclosure;

FIG. 10B is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIGS. 11A-11F are cross-sectional diagrams of an electronic deviceduring the manufacturing process in accordance with some embodiments ofthe present disclosure;

FIG. 12 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 13 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 14 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 15 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 16 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 17 is a cross-sectional diagram of an electronic device inaccordance with some embodiments of the present disclosure;

FIGS. 18A-18D are diagrams of circuit units of an electronic device inaccordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The electronic device of the present disclosure is described in detailin the following description. It should be understood that in thefollowing detailed description, for purposes of explanation, numerousspecific details and embodiments are set forth in order to provide athorough understanding of the present disclosure. The specific elementsand configurations described in the following detailed description areset forth in order to clearly describe the present disclosure. It willbe apparent that the exemplary embodiments set forth herein are usedmerely for the purpose of illustration. In addition, the drawings ofdifferent embodiments may use like and/or corresponding numerals todenote like and/or corresponding elements in order to clearly describethe present disclosure. However, the use of like and/or correspondingnumerals in the drawings of different embodiments does not suggest anycorrelation between different embodiments.

It should be understood that the elements or devices in the drawings ofthe present disclosure may be present in any form or configuration knownto those with ordinary skill in the art. In addition, in theembodiments, relative expressions are used. For example, “lower”,“bottom”, “higher” or “top” are used to describe the position of oneelement relative to another. It should be appreciated that if a deviceis flipped upside down, an element that is “lower” will become anelement that is “higher”. It should be understood that the descriptionsof the exemplary embodiments are intended to be read in connection withthe accompanying drawings, which are to be considered part of the entirewritten description. The drawings are not drawn to scale. In fact, thesize of the element may be arbitrarily enlarged or reduced in order toclearly express the features of the present disclosure.

In addition, it should be understood that, although the terms first,second, third etc. may be used herein to describe various elements,components, or portions, these elements, components, or portions shouldnot be limited by these terms. These terms are only used to distinguishone element, component, area, layer, or portion from another element,component, area, layer, or portion. Thus, a first element, component,area, layer, or portion discussed below could be termed a secondelement, component, area, layer, or portion without departing from theteachings of the present disclosure.

The terms “about”, “approximately”, “substantially”, “generally”typically mean +/−10% of the stated value, or +/−10% of the statedvalue, or +/−5% of the stated value, or +/−3% of the stated value, or+/−2% of the stated value, or +/−1% of the stated value, or +/−0.5% ofthe stated value. The stated value of the present disclosure is anapproximate value. When there is no specific description, the statedvalue includes the meaning of “about”, “approximately”, “substantially”,“generally”. In addition, the terms “the range is from the first valueto the second value” and “the range is between the first value and thesecond value” means that the range includes the first value, the secondvalue, and other values between them.

In some embodiments of the present disclosure, terms concerningattachments, approximately coupling and the like, such as “connected”and “interconnected”, refer to a relationship wherein structures aresecured or attached to one another either directly or indirectly throughintervening structures, as well as both movable or rigid attachments orrelationships, unless expressly described otherwise. In addition, theterm “coupled” includes any direct and indirect electrical connectionmeans.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this disclosure belongs. It should be appreciated that,in each case, the term, which is defined in a commonly used dictionary,should be interpreted as having a meaning that conforms to the relativeskills of the present disclosure and the background or the context ofthe present disclosure, and should not be interpreted in an idealized oroverly formal manner unless so defined.

In accordance with some embodiments of the present disclosure, anelectronic device that is provided includes a phase shifter electrodethat is electrically connected to an active driving element (forexample, a thin film transistor). Compared with the phase shifterelectrode array that is controlled by using a passive driving element(for example, integrated circuits and digital analog converters), theelectronic device provided in the present disclosure can improve theproblem of circuits coupling or short circuits that may be caused byinsufficient wiring space, or reduce the complexity of the circuit orthe power consumption of the electronic device. In accordance with someembodiments, the problem of receiving inconsistent feeding voltagesamong different phase shifter electrodes can be improved by using phaseshifter electrodes that are each electrically connected to the activedriving element.

In accordance with some embodiments of the present disclosure, theprovided electronic device may include an antenna device, a liquidcrystal display device, a sensing device or a tiled device, but it isnot limited thereto. The electronic device may be a bendable or flexibleelectronic device. The antenna device may be, for example, a liquidcrystal antenna, but it is not limited thereto. The tiled device may be,for example, an antenna tiled device, but it is not limited thereto. Itshould be noted that the electronic device may be any arrangement andcombination of the aforementioned devices, and the present disclosure isnot limited thereto.

Refer to FIG. 1A, which is a top-view diagram of an electronic device10A in accordance with some embodiments of the present disclosure. Itshould be understood that, for clarity, some elements (e.g., the secondsubstrate 202, the fourth insulating layer 206, the first conductivelayer 208, etc.) are omitted in the figure, and only a portion of themodulation units 100A of the electronic device 10A is schematicallyillustrated. In different embodiments, the number of the modulationunits 100A of the electronic device 10A can be adjusted according toneeds. In addition, it should be understood that in accordance with someembodiments, additional features may be added to the electronic device10A described below. In some other embodiments, some features of theelectronic device 10A described below may be replaced or omitted.

As shown in FIG. 1A, the electronic device 10A may include a firstsubstrate 102 and a plurality of modulation units 100A disposed on thefirst substrate 102. In accordance with some embodiments, the electronicdevice 10A may include an antenna device, a display device (for example,a liquid crystal display (LCD)), a light-emitting device, a detectiondevice, a tiled device, or other devices for modulating electromagneticwaves, but the present disclosure is not limited thereto. In someembodiments, the electronic device 10A may be an antenna device, and themodulation unit 100A may be an antenna unit for modulatingelectromagnetic waves (for example, radio frequency or microwave).

In some embodiments, the material of the first substrate 102 may includeglass, quartz, sapphire, ceramic, polyimide (PI), liquid crystal polymer(LCP) material, polycarbonate (PC), photo sensitive polyimide (PSPI),polyethylene terephthalate (PET), other suitable substrate materials, ora combination thereof, but it is not limited thereto. In someembodiments, the first substrate 102 may be a flexible substrate, arigid substrate, or a combination thereof.

Furthermore, as shown in FIG. 1A, the electronic device 10A may includea feeding structure 400. The feeding structure 400 may be disposed onthe first substrate 102 for transmitting radio frequency signals, andthe feeding structure 400 may include a plurality of feeding lines 400s. In some embodiments, one feeding line 400 s may correspond to onemodulation unit 100A, but it is not limited thereto. In someembodiments, the feeding structure 400 may be coupled to at least onefeeding source FS, and the feeding source FS may provide an initialfeeding wave. In some embodiments, the initial feed wave may be ahigh-frequency electromagnetic wave. In addition, in some embodiments,the feeding structure 400 may be further coupled to a signal processor,a signal modulator, or a combination thereof (not illustrated).

In some embodiments, the feeding structure 400 may include a wirematerial, such as a conductive material. In some embodiments, theconductive material may include copper (Cu), silver (Ag), tin (Sn),aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr),nickel (Ni), platinum (Pt), titanium (Ti), copper alloy, silver alloy,tin alloy, aluminum alloy, molybdenum alloy, tungsten alloy, gold alloy,chromium alloy, nickel alloy, platinum alloy, titanium alloy, othersuitable conductive materials, or a combination thereof, but it is notlimited thereto.

In addition, the electronic device 10A may include a plurality of phaseshifter electrodes 500 (also referred to as microstrips). The phaseshifter electrodes 500 may be disposed on the first substrate 102, andat least one of the phase shifter electrodes 500 may be used to receivesignals the radio frequency signal from the feeding structure 400.Specifically, the feeding structure 400 may transmit the radio frequencysignal to the phase shifter electrode 500 through the feeding line 400 sin a manner of inducing current, inducing electric field or inducingmagnetic field.

In some embodiments, the material of the phase shifter electrode 500 mayinclude a metal conductive material, a transparent conductive material,or a combination thereof. The metal conductive material may includecopper (Cu), silver (Ag), tin (Sn), aluminum (Al), molybdenum (Mo),tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt),titanium (Ti), copper alloy, silver alloy, tin alloy, aluminum alloy,molybdenum alloy, tungsten alloy, gold alloy, chromium alloy, nickelalloy, platinum alloy, titanium alloy, other suitable conductivematerials or a combination thereof, but it is not limited thereto. Thetransparent conductive material may include a transparent conductiveoxide (TCO). For example, the transparent conductive oxide may includeindium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zincoxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide(ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), or acombination thereof, but it is not limited thereto.

In addition, at least one of the phase shifter electrodes 500 may beelectrically connected to a thin film transistor (TFT) 600. As shown inFIG. 1A, in some embodiments, the phase shifter electrodes 500 may beelectrically connected to the thin film transistors 600 respectively,and the thin film transistors 600 may be further electrically connectedto the data line DL and the scan line (gate line) SL. In addition, insome embodiments, the phase shifter electrodes 500 may be electricallyconnected to the thin film transistor 600, the integrated circuit (IC)and/or the digital analog converter. In other words, in someembodiments, the phase shifter electrodes 500 may be controlled by theactive driving element, and may also be controlled by the passivedriving element.

In addition, in some embodiments, the phase shifter electrode 500 may becoupled to a low-frequency voltage. In accordance with some embodiments,the low-frequency voltage may be in a range from ±0.1 volts (V) to±100V, from ±0.5V to ±50V, or from ±1V to ±15V, but the presentdisclosure is not limited thereto.

Generally, in an array controlled by the passive driving element (e.g.,the integrated circuit and the digital analog converter), at least twoof the lengths of the wires connecting the integrated circuit (ordigital analog converter) and the phase shifter electrode are different,so that the feeding voltages received by at least two phase shifterelectrodes are different. Compared with the array controlled by thepassive driving element, in the array controlled by the phase shifterelectrodes 500 electrically connected to the thin film transistors 600,the phase shifter electrodes 500 may have a uniform feeding voltage ormay reduce the risk of signal distortion.

Furthermore, the electronic device 10A may include a patch element 204,and the patch element 204 may be disposed on at least one of theplurality of phase shifter electrodes 500. As shown in FIG. 1A, in someembodiments, the patch element 204 may be disposed on the phase shifterelectrode 500. In other words, in some embodiments, at least a portionof the patch element 204 may overlap with the phase shifter electrode500 in a normal direction of the first substrate 102 (for example, the Zdirection shown in the figure). In some embodiments, the patch element204 may be electrically floated, coupled to a fixed electric potential(e.g., ground), or coupled to other functional circuits, but it is notlimited thereto.

In some embodiments, the material of the patch element 204 may include ametal conductive material, a transparent conductive material, or acombination thereof. The metal conductive material may include copper(Cu), silver (Ag), tin (Sn), aluminum (Al), molybdenum (Mo), tungsten(W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium(Ti), copper alloy, silver alloy, tin alloy, aluminum alloy, molybdenumalloy, tungsten alloy, gold alloy, chromium alloy, nickel alloy,platinum alloy, titanium alloy, other suitable conductive materials, ora combination thereof, but it is not limited thereto. The transparentconductive material may include a transparent conductive oxide (TCO).The transparent conductive oxide may include indium tin oxide (ITO), tinoxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium galliumzinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide(ATO), antimony zinc oxide (AZO), or a combination thereof, but it isnot limited thereto.

Next, refer to FIG. 1B, which is an enlarged diagram of a portion of theelectronic device 10A in accordance with some embodiments of the presentdisclosure. Specifically, FIG. 1B illustrates the enlarged diagram ofthe modulation unit 100A in the block of FIG. 1A. As shown in FIG. 1B,the thin film transistor 600 may include a gate electrode 602, an activelayer 604, a drain electrode 606 a, and a source electrode 606 b. Insome embodiments, the gate electrode 602 may be electrically connectedto a scan line SL, the drain electrode 606 a may be electricallyconnected to a data line DL, and the source electrode 606 b may beelectrically connected to the phase shifter electrode 500.

In some embodiments, in the top-view direction of the electronic device10A (for example, the X-Y plane in the normal direction of the firstsubstrate 102 (i.e. in the Z direction in FIG. 1A)), the position wherethe thin film transistor 600 intersects with the phase shifter electrode500 (that is, the intersection between the source electrode 606 b andthe phase shifter electrode 500) has an included angle θ. In someembodiments, the included angle θ may be in a range from 30 degrees to150 degrees (i.e. 30 degrees≤the included angle θ≤150 degrees), from 45degrees to 135 degrees, or from 60 degrees to 120 degrees, for example,80 degrees, 85 degrees, 90 degrees, or 95 degrees. In accordance withsome embodiments, the included angle θ may refer to an included angleformed between a center line C1 of the source electrode 606 b and acenter line C2 of the phase shifter electrode 500 at the intersectionposition of the source electrode 606 b and the phase shifter electrode500.

Furthermore, the phase shifter electrode 500 is adjacent to the feedingstructure 400, and the phase shifter electrode 500 may have a spiralshape or a loop shape, but it is not limited thereto. The aspects of theshape of the phase shifter electrode 500 will be further describedbelow. As shown in FIG. 1B, the end of the feeding line 400 s of thefeeding structure 400 may have an end portion 400 t ₁, the end of thephase shifter electrode 500 may have an end portion 500 t ₁, and the endportion 400 t ₁ may be adjacent to the end portion 500 t ₁.

In some embodiments, the end portion 400 t ₁ of the feeding line 400 sof the feeding structure 400 may be disposed opposite the end portion500 t ₁ of the phase shifter electrode 500. Furthermore, in someembodiments, the extending direction of the end portion 400 t ₁ and theextending direction of the end portion 500 t ₁ may be parallel to eachother. Specifically, the end portion 400 t ₁ of the feeding line 400 sand the end portion 500 t ₁ of the phase shifter electrode 500 may beseparated by a first distance d₁. In some embodiments, the firstdistance d₁ may be in a range from 0.05 millimeters (mm) to 5millimeters (i.e. 0.05 mm≤the first distance d₁≤5 mm), from 0.5 mm to4.5 mm, or from 1 mm to 3 mm, for example, 1.5 mm, 2 mm, or 2.5 mm. Inaddition, it should be understood that in accordance with someembodiments of the present disclosure, as shown in FIG. 1B, the firstdistance d₁ may refer to the minimum distance along the extendingdirection (for example, a first longitudinal direction E₁) of thefeeding line 400 s.

It should be noted that if the first distance d₁ is too small (e.g.,less than 0.05 mm), the feeding structure 400 and the phase shifterelectrode 500 may contact each other due to process tolerances and causeshort circuits. On the other hand, if the first distance d₁ is too large(e.g., greater than 5 mm), the feeding structure 400 may be difficult togenerate a coupling effect because it is too far away from the phaseshifter electrode 500, and the RF signal may not be effectively fed tothe phase shifter electrode 500.

Moreover, the feeding line 400 s of the feeding structure 400 may have afirst width W₁. In some embodiments, the first width W₁ may be in arange from 10 μm to 500 μm (i.e. 10 μm≤the first width W₁≤500 μm), from50 μm to 450 μm, from 100 μm to 400 μm, or from 150 μm to 350 μm, forexample, 200 μm, 250 μm, or 300 μm.

On the other hand, the phase shifter electrode 500 may have a secondwidth W₂. In some embodiments, the second width W₂ may be in a rangefrom 5 μm to 500 μm (i.e. 5 μm the second width W₂≤500 μm), from 10 μmto 400 μm, from 50 μm to 350 μm, or from 100 μm to 300 μm, for example,150 μm, 200 μm, or 250 μm.

In some embodiments, the first width W₁ of the feeding line 400 s may begreater than or equal to the second width W₂ of the phase shifterelectrode 500. In addition, it should be understood that in accordancewith some embodiments of the present disclosure, the first width W₁ ofthe feeding line 400 s may refer to the maximum width of any crosssection that is perpendicular to the extending direction (for example,the first longitudinal direction E₁) of the feeding line 400 s.Similarly, in accordance with some embodiments of the presentdisclosure, the second width W₂ of the phase shifter electrode 500 mayrefer to the maximum width of any cross section that is perpendicular tothe extending direction (not illustrated) of the phase shifter electrode500.

As described above, the patch element 204 may be disposed on the phaseshifter electrode 500 and overlap with the phase shifter electrode 500.Specifically, as shown in FIG. 1B, in some embodiments, in a normaldirection of the first substrate 102, the patch element 204 may overlapwith the other end portion 500 t ₂ of the phase shifter electrode 500(e.g., refer to FIGS. 5A-5D). In addition, in some embodiments, in anormal direction of the first substrate 102, the patch element 204 alsomay overlap with an opening 208 p of a first conductive layer 208. Inother words, in some embodiments, the patch element 204 may overlap withthe end portion 500 t ₂ and the opening 208 p of the phase shifterelectrode 500 at the same time (e.g., refer to FIG. 1C). In someembodiments, the patch element 204 may overlap with an opening 208 p ofthe first conductive layer 208 and may not overlap with the end portion500 t ₂.

Furthermore, the feeding line 400 s may extend along the firstlongitudinal direction E₁, and the active layer 604 of the thin filmtransistor 600 may extend along the second longitudinal direction E₂. Insome embodiments, the included angle (not illustrated) between the firstlongitudinal direction E₁ and the second longitudinal direction E₂ maybe in a range from 30 degrees to 150 degrees (i.e. 30 degrees≤theincluded angle between the first longitudinal direction E₁ and thesecond longitudinal direction E₂≤150 degrees), from 45 degrees to 135degrees, or from 60 degrees to 120 degrees, for example, 80 degrees, 85degrees, 90 degrees, or 95 degrees.

In accordance with some embodiments of the present disclosure, the term“longitudinal direction” may refer to a direction that is along orsubstantially parallel to the long axis of an object. The long axis isdefined as a straight line extending lengthwise through the center ofthe object. For an elongated or oval object, the long axis is closest toits maximum longitudinal dimension. For objects that do not have a clearlong axis, the long axis may represent the long side of the smallestrectangle that can surround the object.

In addition, as shown in FIG. 1B, in the top-view direction of theelectronic device 10A or the modulation unit 100A (for example, the X-Yplane in the normal direction of the first substrate 102 (i.e. in the Zdirection in FIG. 1B)), the active layer 604 of the thin film transistor600 do not overlap with the phase shifter electrode 500. In someembodiments, the active layer 604 of the thin film transistor 600 do notoverlap with the feeding structure 400 (including the feeding line 400s) in the top-view direction of the electronic device 10A or themodulation unit 100A. In some embodiments, in the top-view direction ofthe electronic device 10A or the modulation unit 100A, the active layer604 of the thin film transistor 600 and the patch element 204 do notoverlap. In other words, in accordance with some embodiments, a distanceis maintained between the active layer 604 and the phase shifterelectrode 500, the feeding structure 400, and the patch element 204,that is, they do not overlap each other.

Specifically, when the switch of the thin film transistor 600 is turnedon, charges will accumulate in the active layer 604, and then thevoltage signal will be written from the data line DL, and a highfrequency radio frequency signal will generate induced current at thephase shifter electrode 500. The current easily interferes with the freecharges of the active layer 604, which causes the problem ofcommunication crosstalk. In accordance with some embodiments, with theaforementioned configuration (the active layer 604 of the thin filmtransistor 600 does not overlap with the phase shifter electrode 500,the feeding structure 400, and the patch element 204), the problem ofcommunication crosstalk can be reduced, or the impact on antennaperformance can be reduced.

Next, refer to FIG. 1C, which is a cross-sectional diagram of theelectronic device 10A in accordance with some embodiments of the presentdisclosure. Specifically, FIG. 1C shows a cross-sectional structure ofthe modulation unit 100A along a section line X-X′ in FIG. 1B. Asdescribed above, the electronic device 10A may include the firstsubstrate 102 and the second substrate 202. In addition, as shown inFIG. 1C, the electronic device 10A may include a liquid crystal layer300. The liquid crystal layer 300 may be disposed between the firstsubstrate 102 and the second substrate 202.

In some embodiments, the material of the liquid crystal layer 300 mayinclude nematic liquid crystal, smectic liquid crystal, cholestericliquid crystal, blue-phase liquid crystal, other suitable liquid crystalmaterials or a combination thereof, but it is not limited thereto. Inaccordance with some embodiments, the capacitance may be adjusted byapplying different electric fields to the liquid crystal layer 300 tocontrol the transmission direction of the electromagnetic signalspassing through the opening 208 p and the patch element 204.

It should be noted that, in general patch antenna devices, the thin filmtransistor and the patch element are disposed on the same side (e.g.,relative to the liquid crystal layer 300). However, in accordance withsome embodiments of the present disclosure, the thin film transistor 600and the phase shifter electrode 500 are disposed on the same side (e.g.,relative to the liquid crystal layer 300). In other words, in someembodiments, the thin film transistor 600 may be disposed between theliquid crystal layer 300 and the first substrate 102.

As described above, in accordance with some embodiments, the electronicdevice 10A includes the first conductive layer 208. As shown in FIG. 1C,the first conductive layer 208 may be disposed on the second substrate202, and may be between the liquid crystal layer 300 and the secondsubstrates 202. Specifically, in some embodiments, the first conductivelayer 208 may be patterned to have the opening 208 p. In someembodiments, the first conductive layer 208 may be grounded.

In some embodiments, the material of the first conductive layer 208 mayinclude a metal conductive material, a transparent conductive material,or a combination thereof. The metal conductive material may includecopper (Cu), silver (Ag), tin (Sn), aluminum (Al), molybdenum (Mo),tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt),titanium (Ti), copper alloy, silver alloy, tin alloy, aluminum alloy,molybdenum alloy, tungsten alloy, gold alloy, chromium alloy, nickelalloy, platinum alloy, titanium alloy, other suitable conductivematerials or a combination thereof, but it is not limited thereto. Thetransparent conductive material may include a transparent conductiveoxide (TCO). For example, the transparent conductive oxide may includeindium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zincoxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide(ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO) or the acombination thereof, but it is not limited thereto.

Specifically, in some embodiments, a physical vapor deposition (PVD)process, a chemical vapor deposition (CVD) process, a coating process,an electroplating process, an electroless plating process, othersuitable processes, or a combination thereof may be used to form thefirst conductive layer 208. For example, the physical vapor depositionprocess may include a sputtering process, an evaporation process, or apulsed laser deposition process, but it is not limited thereto. Forexample, the chemical vapor deposition process may include a lowpressure chemical vapor deposition (LPCVD) process, a low temperaturechemical vapor deposition (LTCVD) process, a rapid thermal chemicalvapor deposition (RTCVD) process, a plasma enhanced chemical vapordeposition (PECVD) process, or an atomic layer deposition (ALD) process,but it is not limited thereto.

In some embodiments, the patterning process may include aphotolithography process and an etching process. The photolithographyprocess may include, but is not limited to, photoresist coating (e.g.,spin coating), soft baking, hard baking, mask alignment, exposure,post-exposure baking, photoresist development, cleaning, and drying. Theetching process may include, but is not limited to, a dry etchingprocess or a wet etching process.

As described above, in some embodiments, the thin film transistor 600may be disposed between the liquid crystal layer 300 and the firstsubstrate 102. More specifically, in some embodiments, the electronicdevice 10A may further include a buffer layer 104, a first insulatinglayer 106, a second insulating layer 108, and a third insulating layer110 that are sequentially disposed on the first substrate 102. In someembodiments, the buffer layer 104 may be disposed on the first substrate102 and located between the thin film transistor 600 and the firstsubstrate 102. In some embodiments, the gate electrode 602 of the thinfilm transistor 600 may be disposed on the buffer layer 104.

In some embodiments, the buffer layer 104 may be formed of an insulatingmaterial. In some embodiments, the material of the buffer layer 104 mayinclude an organic material, an inorganic material, or a combinationthereof, but it is not limited thereto. The organic material may includepolyethylene terephthalate (PET), polyethylene (PE), polyethersulfone(PES), polycarbonate (PC), polymethylmethacrylate (PMMA), isoprene,phenol-formaldehyde resin, benzocyclobutene (BCB), perfluorocyclobutane(PECB), or a combination thereof, but it is not limited thereto. Theinorganic material may include silicon nitride, silicon oxide, siliconoxynitride, or a combination thereof, but it is not limited thereto.

In some embodiments, the buffer layer 104 may be a single layerstructure. In some other embodiments, the buffer layer 104 may include aplurality of sublayers. In the embodiments where the buffer layer 104includes a plurality of sub-layers, the material of each sub-layer maybe the same or different.

In addition, in some embodiments, the material of the gate electrode 602may include copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W),gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti),copper alloy, aluminum alloy, molybdenum alloy, tungsten alloy, goldalloy, chromium alloy, nickel alloy, platinum alloy, titanium alloy,other suitable metal materials or a combination thereof, but it is notlimited thereto.

As shown in FIG. 1C, in some embodiments, the first insulating layer 106may be disposed between the gate electrode 602 and the active layer 604.In some embodiments, the first insulating layer 106 may serve as a gatedielectric layer. In some embodiments, the drain electrode 606 a and thesource electrode 606 b may be disposed on the first insulating layer106, and the drain electrode 606 a and the source electrode 606 b maypartially overlap with the active layer 604.

In some embodiments, the material of the first insulating layer 106 mayinclude silicon oxide, silicon nitride, silicon oxynitride, high-kdielectric material, other suitable dielectric materials, or acombination thereof, but it is not limited thereto. For example, thehigh-k dielectric material may include, but is not limited to, metaloxide, metal nitride, metal silicide, metal aluminate, zirconiumsilicate, zirconium aluminate, or a combination thereof. The inorganicmaterial may include, but is not limited to, silicon nitride, silicondioxide, silicon oxynitride, or a combination thereof. The organicmaterial may include, but is not limited to, perfluoroalkoxy alkane(PFA), polytetrafluoroethylene (PTFE), fluorinated ethylene propylene(FEP), polyethylene, or a combination thereof.

In some embodiments, the material of the active layer 604 may includeamorphous silicon, polycrystalline silicon, metal nitride, metal oxide,other suitable materials, or a combination thereof, but it is notlimited thereto.

In some embodiments, the material of the drain electrode 606 a and thesource electrode 606 b may include copper (Cu), aluminum (Al),molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni),platinum (Pt), titanium (Ti), copper alloy, aluminum alloy, molybdenumalloy, tungsten alloy, gold alloy, chromium alloy, nickel alloy,platinum alloy, titanium alloy, other suitable metal materials or acombination thereof, but it is not limited thereto.

In addition, in some embodiments, the second insulating layer 108 may bedisposed on the first insulating layer 106 and cover the active layer604, the drain electrode 606 a, and the source electrode 606 b. In someembodiments, the phase shifter electrode 500 and the feeding structure400 may be disposed on the second insulating layer 108. Furthermore, insome embodiments, the third insulating layer 110 may be disposed on thesecond insulating layer 108 and cover the phase shifter electrode 500and the feeding structure 400. Moreover, the materials of the secondinsulating layer 108 and the third insulating layer 110 may be the sameas or similar to that of the first insulating layer 106, and thus willnot be repeated herein.

As described above, in some embodiments, the phase shifter electrode 500may be electrically connected to the thin film transistor 600.Specifically, the phase shifter electrode 500 may be electricallyconnected to the source electrode 606 b of the thin film transistor 600through a via 502. In addition, the material of the via 502 may be thesame as or different from that of the phase shifter electrode 500.

Furthermore, as shown in FIG. 1C, in some embodiments, the electronicdevice 10A may further include a fourth insulating layer 206 disposedbetween the second substrate 202 and the patch element 204. The materialof the fourth insulating layer 206 may be the same as or similar to thatof the first insulating layer 106, and thus will not be repeated herein.

In some embodiments, the active layer 604 and the phase shifterelectrode 500 may be separated by a second distance d₂. In someembodiments, the second distance d₂ may be in a range from 0.1 mm to 100mm (i.e. 0.1 mm≤the second distance d₂≤100 mm), from 1 mm to 90 mm, orfrom 10 mm to 80 mm, for example, 20 mm, 30 mm, 40 mm, 50 mm, 60 mm, or70 mm.

In accordance with the embodiments of the present disclosure, the seconddistance d₂ may refer to the minimum distance between the active layer604 and the phase electrodes 500 in a direction that is perpendicular tothe normal direction of the first substrate 102 (for example, the Xdirection shown in the figure). Alternatively, in accordance with theembodiments of the present disclosure, the second distance d₂ may alsorefer to the minimum distance between the projections of the activelayer 604 and the phase shifter electrode 500 on the first substrate102.

Furthermore, in some embodiments, the active layer 604 and the feedingstructure 400 may be separated by a third distance d₃. In someembodiments, the third distance d₃ may be in a range from 1 mm to 200 mm(i.e. 1 mm≤the third distance d₃≤200 mm), from 20 mm to 180 mm, or from50 mm to 150 mm, for example, 70 mm, 80 mm, 90 mm, 100 mm, 110 mm, 120mm, or 130 mm.

In accordance with the embodiments of the present disclosure, the thirddistance d₃ may refer to the minimum distance between the active layer604 and the feeding structure 400 in a direction that is perpendicularto the normal direction of the first substrate 102 (for example, the Xdirection shown in the figure). Alternatively, in accordance with theembodiments of the present disclosure, the third distance d₃ may alsorefer to the minimum distance between the projections of the activelayer 604 and the feeding structure 400 on the first substrate 102.

Furthermore, in some embodiments, the active layer 604 and the patchelement 204 may be separated by a fourth distance d₄. In someembodiments, the fourth distance d₄ may be in a range from 0.1 mm to 150mm (i.e. 0.1 mm≤the fourth distance d₄≤150 mm), from 10 mm to 130 mm, orfrom 30 mm to 110 mm, for example, 50 mm, 60 mm, 70 mm, 80 mm, 90 mm, or100 mm.

In accordance with the embodiments of the present disclosure, the fourthdistance d₄ may refer to the minimum distance between the active layer604 and the patch element 204 in the direction that is perpendicular tothe normal direction of the first substrate 102 (for example, the Xdirection shown in the figure). Alternatively, in accordance with theembodiments of the present disclosure, the fourth distance d₄ may alsorefer to the minimum distance between the projections of the activelayer 604 and the patch element 204 on the first substrate 102.

As mentioned above, in accordance with some embodiments, a distance ismaintained between the active layer 604 of the thin film transistor 600and the phase shifter electrode 500, the feeding structure 400, and thepatch element 204, thereby reducing the effect of communicationcrosstalk, or reduce the impact on antenna performance.

In addition, in accordance with some embodiments, the electronic device10A may further include spacer elements (not illustrated) disposedbetween the first substrate 102 and the second substrate 202 to enhancethe structural strength of the electronic device 10A. In someembodiments, the spacer elements may have a ring structure. In someembodiments, the spacer elements may have a columnar structure and bearranged in parallel, but it is not limited thereto.

Furthermore, the material of the spacer element may include aninsulating material, a conductive material, or a combination thereof.The conductive material may include copper, silver, gold, copper alloy,silver alloy, gold alloy, or a combination thereof, but it is notlimited thereto. The insulating material may include polyethyleneterephthalate (PET), polyethylene (PE), polyethersulfone (PES),polycarbonate (PC), polymethylmethacrylate (PMMA), glass, or acombination thereof, but it is not limited thereto.

Next, refer to FIGS. 2A-2D, which are cross-sectional diagrams of theelectronic device 10A during the manufacturing process in accordancewith some embodiments of the present disclosure. Specifically, FIGS.2A-2D illustrate the steps of forming a portion of the elements(elements that are formed on the first substrate 102) of the electronicdevice 10A. It should be understood that in accordance with someembodiments, additional operation steps may be provided before, duringand/or after the manufacturing process of the electronic device 10A isperformed. In accordance with some embodiments, some of the operationsteps may be replaced or omitted. In accordance with some embodiments,the order of the operation steps may be interchangeable.

Referring to FIG. 2A, in some embodiments, the first substrate 102 maybe provided, and then the buffer layer 104 may be formed on the firstsubstrate 102. In some embodiments, the buffer layer 104 may be formedby a physical vapor deposition process, a chemical vapor depositionprocess, a coating process, other suitable processes, or a combinationthereof. The physical vapor deposition process may include, for example,a sputtering process, an evaporation process, or a pulsed laserdeposition process, but it is not limited thereto. The chemical vapordeposition process may include, for example, a low pressure chemicalvapor deposition (LPCVD) process, a low temperature chemical vapordeposition (LTCVD) process, a rapid thermal chemical vapor depositionprocess (RTCVD) process, a plasma enhanced chemical vapor deposition(PECVD) process, an atomic layer deposition (ALD) process, etc., but itis not limited thereto.

Next, in accordance with some embodiments, the gate electrode 602 may beformed on the buffer layer 104. In some embodiments, the scan line SL(not illustrated) may be formed simultaneously in the step of formingthe gate electrode 602.

In some embodiments, the gate electrode 602 and/or the scan line SL maybe formed by the physical vapor deposition process, the chemical vapordeposition process, the electroplating process, the electroless platingprocess, other suitable processes, or a combination thereof. Inaddition, in some embodiments, the gate electrode 602 and/or the scanline SL may be patterned by a patterning process. In some embodiments,the patterning process may include a photolithography process and anetching process. The photolithography process may include, but is notlimited to, photoresist coating (e.g., spin coating), soft baking, hardbaking, mask alignment, exposure, post-exposure baking, photoresistdevelopment, cleaning, and drying. The etching process may include, butis not limited to, a dry etching process or a wet etching process.

Next, in accordance with some embodiments, the first insulating layer106 may be formed on the gate electrode 602 to cover the gate electrode602. In some embodiments, the first insulating layer 106 may be formedby the physical vapor deposition process, the chemical vapor depositionprocess, the coating process, other suitable processes, or a combinationthereof.

Thereafter, in accordance with some embodiments, the active layer 604may be formed on the first insulating layer 106. In some embodiments,the active layer 604 may overlap with the gate electrode 602 in a normaldirection of the first substrate 102 (for example, the Z direction shownin the figure).

In some embodiments, the active layer 604 may be formed by the physicalvapor deposition process, the chemical vapor deposition process, othersuitable processes, or a combination thereof. Moreover, in someembodiments, the active layer 604 may be patterned by a patterningprocess.

As shown in FIG. 2B, in accordance with some embodiments, after theactive layer 604 is formed on the first insulating layer 106, the drainelectrode 606 a and the source electrode 606 b may be further formed onthe first insulating layer 106. The drain electrode 606 a and the sourceelectrode 606 b may be disposed on both sides of the active layer 604,and the drain electrode 606 a and the source electrode 606 b maypartially cover the active layer 604. Here, the steps of forming thethin film transistor 600 are substantially completed.

In some embodiments, the drain electrode 606 a and the source electrode606 b may be formed by the physical vapor deposition process, thechemical vapor deposition process, the electroplating process, theelectroless plating process, other suitable processes, or a combinationthereof. In addition, in some embodiments, the drain electrode 606 a andthe source electrode 606 b may be patterned by a patterning process.

In accordance with some embodiments, the second insulating layer 108 maythen be formed on the first insulating layer 106 to cover the activelayer 604, the drain electrode 606 a, and the source electrode 606 b. Insome embodiments, the second insulating layer 108 may be formed by thephysical vapor deposition process, the chemical vapor depositionprocess, the coating process, other suitable processes, or a combinationthereof.

Next, referring to FIG. 2C, in accordance with some embodiments, anopening 502 p may be formed in the second insulating layer 108, and theopening 502 p may extend from the top surface of the second insulatinglayer 108 to the top surface of the source electrode 606 b. Furthermore,a portion of the source electrode 606 b may be exposed in the opening502 p. In some embodiments, the opening 502 p may be formed in thesecond insulating layer 108 by using a patterning process.

Next, referring to FIG. 2D, in accordance with some embodiments, aconductive material may be filled in the opening 502 p to form the via502. In some embodiments, the via 502 may be formed by the physicalvapor deposition process, the chemical vapor deposition process, theelectroplating process, the electroless plating process, other suitableprocesses, or a combination thereof.

Next, in accordance with some embodiments, the phase shifter electrode500 and the feeding structure 400 (feeding line 400 s) may be formed onthe second insulating layer 108, and the phase shifter electrode 500 maybe in contact with (or electrically connected to) the via 502. In someembodiments, the phase shifter electrode 500 may partially overlap withthe source electrode 606 b in the normal direction of the firstsubstrate 102 (for example, the Z direction shown in the figure).

In some embodiments, the phase shifter electrode 500 and the feedingstructure 400 may be formed by the physical vapor deposition process,the chemical vapor deposition process, the electroplating process, theelectroless plating process, other suitable processes, or a combinationthereof. In addition, in some embodiments, the phase shifter electrode500 and the feeding structure 400 may be patterned by a patterningprocess.

In addition, in some embodiments, the via 502 and the phase shifterelectrode 500 may be formed in the same step or different steps.Furthermore, the phase shifter electrode 500 and the feeding structure400 may also be formed in the same step or different steps.

Next, in accordance with some embodiments, the third insulating layer110 may be formed on the second insulating layer 108 and cover the phaseshifter electrode 500 and the feeding structure 400. Here, the steps offorming the first substrate 102 and the elements thereon aresubstantially completed. In some embodiments, the third insulating layer110 may be formed by the physical vapor deposition process, the chemicalvapor deposition process, the coating process, other suitable processes,or a combination thereof.

Next, refer to FIG. 3, which is a top-view diagram of an electronicdevice 10B in accordance with some other embodiments of the presentdisclosure. It should be understood that the same or similar componentsor elements in above and below contexts are represented by the same orsimilar reference numerals. The materials, manufacturing methods andfunctions of these components or elements are the same or similar tothose described above, and thus will not be repeated herein.

The electronic device 10B shown in FIG. 3 is substantially similar tothe electronic device 10A shown in FIG. 1A. The difference between themincludes that the feeding structure 400 of the electronic device 10B isfurther coupled to another feeding source FS. Specifically, in thisembodiment, the feeding structure 400 is coupled to two feeding sourcesFS, and the feeding sources FS can provide feeding waves to the phaseshifter electrode 500 in a bidirectional manner.

In addition, as shown in FIG. 3, in some embodiments, the active layers604 of two adjacent thin film transistors 600 may be separated by afifth distance d₅. In some embodiments, the fifth distance d₅ may be ina range from 0.5 times the operating wavelength (λ) to 0.8 times theoperating wavelength (i.e. 0.5λ≤the fifth distance d₅≤0.8λ), forexample, 0.6 times the operating wavelength, or 0.7 times the operatingwavelength.

Specifically, in some embodiments, the frequency of the operable radiofrequency signal may be in a range from 0.7 GHz to 300 GHz, so the rangeof the fifth distance d₅ may be in a range from 0.1 mm to 300 mm (i.e.0.1 mm≤fifth distance d₅≤300 mm), from 10 mm to 250 mm, or from 50 mm to200 mm, for example, 100 mm or 150 mm.

It should be understood that, in accordance with some embodiments of thepresent disclosure, the fifth distance d₅ may refer to the distancebetween the same corresponding positions of two adjacent active layers604 (i.e. if the leftmost position of an active layer is used, theleftmost position of the other active layer is used; similarly, if therightmost position of an active layer is used, the rightmost position ofthe other active layer is used) in a direction that is perpendicular tothe normal direction of the first substrate 102 (for example, the Xdirection or Y direction shown in the figure). Alternatively, inaccordance with some embodiments of the present disclosure, the fifthdistance d₅ may also refer to the distance between the projections ofthe same positions of two adjacent active layers 604 on the firstsubstrate 102.

In addition, in some embodiments, the two adjacent patch elements 204may be separated by a sixth distance d₆. In some embodiments, the sixthdistance d6 may be in a range from 0.5 times the operating wavelength to0.8 times the operating wavelength (i.e. 0.5λ≤the sixth distanced₆≤0.8λ), for example, 0.6 times the operating wavelength, or 0.7 timesthe operating wavelength.

Specifically, in some embodiments, the frequency of the operable radiofrequency signal is in a range from 0.7 GHz to 300 GHz, so the sixthdistance d₆ may be in a range from 0.1 mm to 300 mm (i.e. 0.1 mm≤thesixth distance d₆≤300 mm), from 10 mm to 250 mm, or from 50 mm to 200mm, for example, 100 mm or 150 mm.

It should be understood that in accordance with some embodiments of thepresent disclosure, the sixth distance d₆ may refer to the minimumdistance between the patch elements 204 in a direction that isperpendicular to the normal direction of the first substrate 102 (forexample, the X direction or the Y direction shown in the figure).Alternatively, in accordance with some embodiments of the presentdisclosure, the sixth distance d₆ may also refer to the minimum distancebetween the projections of two adjacent patch elements 204 on the firstsubstrate 102.

As described above, in accordance with some embodiments, the elements ofthe modulation unit 100A (e.g., the active layer 604 and the patchelement 204 of the thin film transistor 600) that are arranged with acertain distance interval may facilitate the spatial configuration ofthe electronic device 10B or reduce the risk of coupling betweenadjacent modulation units 100A.

Next, refer to FIG. 4, which is a top-view diagram of an electronicdevice 10C in accordance with some other embodiments of the presentdisclosure. As shown in FIG. 4, in this embodiment, the feedingstructure 400 of the electronic device 10C may be coupled to fivefeeding sources FS. Specifically, in this embodiment, the feedingstructure 400 is coupled to two sets of bidirectional feeding sourcesFS, and is further coupled to a feeding source FS that is locatedsubstantially at a central area of the feeding structure 400. In otherwords, in this embodiment, the feeding structure 400 can provide feedingwaves to the phase shifter electrode 500 in a manner of multi-directioncombining with a center point.

In some embodiments, the feeding source FS that is located at the centerpoint of the feeding structure 400 and other feeding sources FS may bedisposed on different sides of the first substrate 102. In other words,the feeding source FS that is located at the center point of the feedingstructure 400 may be disposed on the back side of the first substrate102. In some embodiments, the feeding structure 400 may be electricallyconnected to the feeding source FS that is disposed on the back side ofthe first substrate 102 through a via (not illustrated).

It should be understood that, although the foregoing embodiments onlyillustrate the aspects in which the feeding structure 400 is coupled toone, two, or five feeding sources FS, the number of the feeding sourcesFS that is coupled to the feeding structure 400 can be adjustedaccording to needs in different embodiments.

Next, refer to FIGS. 5A-5D, which are top-view diagrams of the phaseshifter electrodes 500 in accordance with some embodiments of thepresent disclosure. As shown in FIGS. 5A-5D, in some embodiments, thephase shifter electrode 500 may have an irregular shape, and the phaseshifter electrode 500 may have a plurality of bending portions BP. Forexample, in some embodiments, the phase shifter electrode 500 may have aplurality of concave portions and convex portions, spiral-shaped orloop-shaped portions, or a combination thereof, but the presentdisclosure is not limited thereto.

As shown in FIGS. 5A-5D, the phase shifter electrode 500 may have theend portion 500 t ₁ and the end portion 500 t ₂. In some embodiments,the end portion 500 t ₁ of the phase shifter electrode 500 may extendalong the third longitudinal direction E₃, and the end portion 500 t ₂of the phase shifter electrode 500 may extend along the fourthlongitudinal direction E₄. In some embodiments, the third longitudinaldirection E₃ may be substantially perpendicular to the fourthlongitudinal direction E₄ (e.g., the embodiments shown in FIGS. 5A and5C) or the third longitudinal direction E₃ may be substantially parallelto the fourth longitudinal direction E₄ (e.g., the embodiments shown inFIGS. 5B and 5D), but it is not limited thereto. In some otherembodiments, an included angle (not illustrated) between the thirdlongitudinal direction E₃ and the fourth longitudinal direction E₄ maybe in a range from 5 degrees to 270 degrees, from 35 degrees to 240degrees, from 60 degrees to 210 degrees, or from 70 degrees to 200degrees.

Furthermore, in some embodiments, the phase shifter electrode 500 mayhave a length L. In some embodiments, the length L of the phase shifterelectrode 500 may be in a range from 0.5 times the operating wavelengthto 0.8 times the operating wavelength (i.e. 0.5λ≤the length L≤0.8λ), forexample, 0.6 times the operating wavelength, or 0.7 times the operatingwavelength.

Specifically, in some embodiments, the frequency of the operable radiofrequency signal may be in a range from 0.7 GHz to 300 GHz, so the rangeof the length L may be in a range from 0.1 mm to 300 mm (i.e. 0.1 mm≤thelength L≤300 mm), from 10 mm to 250 mm, or from 50 mm to 200 mm, forexample, 100 mm or 150 mm.

In accordance with some embodiments of the present disclosure, for thephase shifter electrode 500 having a rectangular, elliptical, orelongated shape as a whole, the length L may be defined as its maximumdimension in the longitudinal direction (for example, the Y directionshown in FIGS. 5A-5D). For the phase shifter electrode 500 not having adefinite long axis, the length L may be defined as the long side of thesmallest rectangle that can surround the phase shifter electrode 500.

Furthermore, in some embodiments, the phase shifter electrode 500 mayhave a width W. In some embodiments, the width W of the phase shifterelectrode 500 may be in a range from 0.5 times the operating wavelengthto 0.8 times the operating wavelength (i.e. 0.5≤λ≤the width W≤0.8λ), forexample, 0.6 times the operating wavelength, or 0.7 times the operatingwavelength.

Specifically, in some embodiments, the frequency of the operable radiofrequency signal may be in a range from 0.7 GHz to 300 GHz, so the widthW may be in a range from 0.1 mm to 300 mm (i.e. 0.1 mm≤the width W≤300mm), from 10 mm to 250 mm, or from 50 mm to 200 mm, for example, 100 mmor 150 mm.

Similarly, in accordance with some embodiments of the presentdisclosure, for the phase shifter electrode 500 having a rectangular,elliptical, or elongated shape as a whole, the width W may be defined asits maximum dimension in the lateral direction (for example, the Xdirection shown in FIGS. 5A-5D). For the phase shifter electrode 500 nothaving a definite short axis, the width W may be defined as the shortside of the smallest rectangle that can surround the phase shifterelectrode 500.

Moreover, in some embodiments, the total length of the phase shifterelectrode 500 (i.e. the total length from the end portion 500 t ₁ to theend portion 500 t ₂) may be in a range from 5 mm to 2100 mm, from 100 mmto 2000 mm, or from 500 mm to 1500 mm. In addition, as shown in FIG. 5C,in some embodiments, the phase shifter electrode 500 may have aplurality of loops. In such embodiments, the number of the loops may bein a range from 1 to 20 laps, from 3 to 18 laps, or from 5 to 15 laps,for example, 6 laps, 8 laps, 10 laps, 12 laps, or 14 laps.

Next, refer to FIG. 6, which is a cross-sectional diagram of anelectronic device 10D in accordance with some other embodiments of thepresent disclosure. As shown in FIG. 6, in some embodiments, the feedingstructure 400 and the phase shifter electrode 500 may be disposed atdifferent levels (on different layers) in the cross-sectional structure.Specifically, in this embodiment, the phase shifter electrode 500 may bedisposed on the first substrate 102 and between the first substrate 102and the first insulating layer 106, and the feeding structure 400 may bedisposed on the second insulating layer 108.

In this embodiment, the phase shifter electrode 500 and the drainelectrode 606 a, the source electrode 606 b, and the gate electrode 602of the thin film transistor 600 may be disposed on different layers. Inthis embodiment, the phase shifter electrode 500 may be electricallyconnected to the source electrode 606 b of the thin film transistor 600through the via 502. In addition, in this embodiment, in the normaldirection of the first substrate 102 (for example, the Z direction shownin the figure), the feeding structure 400 may partially overlap with thephase shifter electrode 500.

Next, refer to FIG. 7, which is a cross-sectional diagram of anelectronic device 10E in accordance with some other embodiments of thepresent disclosure. As shown in FIG. 7, in some embodiments, the feedingstructure 400 and the phase shifter electrode 500 may be disposed at thesame level (on the same layer) in the cross-sectional structure. In thisembodiment, the phase shifter electrode 500 may also be disposed on thesame layer as the drain electrode 606 a and the source electrode 606 bof the thin film transistor 600. In some embodiments, the phase shifterelectrode 500 may also be disposed on the same layer as the scan line SLand/or the data line DL (not illustrated). In addition, in thisembodiment, the phase shifter electrode 500 may be in contact with thesource electrode 606 b.

Next, refer to FIG. 8, which is a cross-sectional diagram of anelectronic device 10F in accordance with some other embodiments of thepresent disclosure. As shown in FIG. 8, in some embodiments, the feedingstructure 400 and the phase shifter electrode 500 may be disposed on thesame layer in the cross-sectional structure. In this embodiment, thephase shifter electrode 500 may also be disposed on the same layer asthe gate electrode 602 of the thin film transistor 600. In thisembodiment, the phase shifter electrode 500 and the drain electrode 606a and the source electrode 606 b of the thin film transistor 600 may bedisposed on different layers. In this embodiment, the phase shifterelectrode 500 may be electrically connected to the source electrode 606b of the thin film transistor 600 through the via 502.

Next, refer to FIG. 9, which is a cross-sectional diagram of anelectronic device 10G in accordance with some other embodiments of thepresent disclosure. The electronic device 10G shown in FIG. 9 issubstantially similar to the electronic device 10A shown in FIG. 1C. Thedifference between them includes that the electronic device 10G mayfurther include a storage capacitor Cst, and the storage capacitor Cstmay be electrically connected to the phase shifter electrode 500.

Specifically, as shown in FIG. 9, in this embodiment, the electronicdevice 10G may further include a first conductive element 120, and thefirst conductive element 120 may be disposed on the buffer layer 104 andoverlap with the source electrode 606 b in the normal direction of thefirst substrate 102. In addition, in this embodiment, the firstconductive element 120 may be grounded. In this embodiment, the firstconductive element 120, the source electrode 606 b, and the firstinsulating layer 106 disposed between the first conductive element 120and the source electrode 606 b may serve as the storage capacitor Cst.

In some embodiments, the material of the first conductive element 120may include a conductive material. The conductive material may includecopper (Cu), silver (Ag), tin (Sn), aluminum (Al), molybdenum (Mo),tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt),titanium (Ti), copper alloy, silver alloy, tin alloy, aluminum alloy,molybdenum alloy, tungsten alloy, gold alloy, chromium alloy, nickelalloy, platinum alloy, titanium alloy, other suitable conductivematerials, or a combination thereof, but it is not limited thereto.

Next, refer to FIGS. 10A and 10B. FIG. 10A is a top-view diagram of anelectronic device 10H in accordance with some other embodiments of thepresent disclosure, and FIG. 10B is a cross-sectional diagram of theelectronic device 10H in accordance with some embodiments of the presentdisclosure. As shown in FIGS. 10A and 10B, in this embodiment, thefeeding structure 400 may include the feeding line 400 s, a via 402, anda second conductive element 420. In this embodiment, the feedingstructure 400 may be a non-single-layer conductive structure.

Specifically, as shown in FIG. 10B, the feeding line 400 s and the phaseshifter electrode 500 may be disposed on the same layer, and the feedingline 400 s may be electrically connected to the second conductiveelement 420 through the via 402, and the second conductive element 420may be disposed on the first substrate 102 or on the buffer layer 104,but it is not limited thereto. In this embodiment, the second conductiveelement 420 may have a first thickness T₁, and the feeding line 400 smay have a second thickness T₂. In this embodiment, the first thicknessT₁ of the second conductive element 420 may be greater than or equal tothe second thickness T₂ of the feeding line 400 s. In addition, in thisembodiment, the conductivity of the second conductive element 420 may begreater than or equal to the conductivity of the feeding line 400 s.

Furthermore, in accordance with the embodiments of the presentdisclosure, the thickness of the second conductive element 420 and thefeeding line 400 s may refer to the maximum thickness of the secondconductive element 420 and the feeding line 400 in the normal directionof the first substrate 102 (for example, the Z direction shown in thefigure).

In addition, in accordance with the embodiments of the presentdisclosure, an optical microscopy (OM), a scanning electron microscope(SEM), a thin film thickness profiler (α-step), an ellipse thicknessgauge, or other suitable means to measure the thickness of eachcomponent. Specifically, in some embodiments, after the liquid crystallayer 300 is removed, the scanning electron microscope can be used toobtain any cross-sectional image of the structure, and the thickness ofeach element in the image can be measured.

In some embodiments, the material of the second conductive element 420may include a conductive material. The conductive material may includecopper (Cu), silver (Ag), tin (Sn), aluminum (Al), molybdenum (Mo),tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt),titanium (Ti), copper alloy, silver alloy, tin alloy, aluminum alloy,molybdenum alloy, tungsten alloy, gold alloy, chromium alloy, nickelalloy, platinum alloy, titanium alloy, other suitable conductivematerials, or a combination thereof, but it is not limited thereto. Inaddition, the material of the second conductive element 420 may be thesame as or different from the material of the feeding line 400 s or thevia 402.

In this embodiment, a portion of the structure of the feeding structure400 such as the second conductive element 420 may be disposed on thelower layer (e.g., on the first substrate 102), and another portion ofthe structure of the feeding structure 400 such as the feeding line 400s may be disposed on the upper layer (e.g., on the second insulatinglayer 108), thereby reducing the energy dissipation of the electronicdevice 10H.

Next, refer to FIGS. 11A-11F, which are cross-sectional diagrams of theelectronic device 10H during the manufacturing process in accordancewith some embodiments of the present disclosure. Specifically, FIGS.11A-11F illustrate the steps of forming a portion of the elements(elements that are formed on the first substrate 102) of the electronicdevice 10H. It should be understood that in accordance with someembodiments, additional operation steps may be provided before, duringand/or after the manufacturing process of the electronic device 10H isperformed. In accordance with some embodiments, some of the operationsteps may be replaced or omitted. In accordance with some embodiments,the order of the operation steps may be interchangeable.

Referring to FIG. 11A, in some embodiments, the first substrate 102 maybe provided, and then the second conductive element 420 may be formed onthe first substrate 102 or the buffer layer 104, but it is not limitedthereto. In some embodiments, the second conductive element 420 may beformed by a physical vapor deposition process, a chemical vapordeposition process, an electroplating process, an electroless platingprocess, other suitable processes, or a combination thereof. Inaddition, in some embodiments, the second conductive element 420 may bepatterned by a patterning process.

Next, the buffer layer 104 may be formed on the first substrate 102 andcover the second conductive element 420. In some embodiments, the bufferlayer 104 may be formed by a physical vapor deposition process, achemical vapor deposition process, a coating process, other suitableprocesses, or a combination thereof.

Next, in accordance with some embodiments, the gate electrode 602 may beformed on the buffer layer 104. In some embodiments, the scan line SL(not illustrated) may be formed simultaneously in the step of formingthe gate electrode 602. In some embodiments, the gate electrode 602and/or the scan line SL may be formed by the physical vapor depositionprocess, the chemical vapor deposition process, the electroplatingprocess, the electroless plating process, other suitable processes, or acombination thereof. In addition, in some embodiments, the gateelectrode 602 and/or the scan line SL may be patterned by a patterningprocess.

Next, in accordance with some embodiments, the first insulating layer106 may be formed on the gate electrode 602 to cover the gate electrode602. In some embodiments, the first insulating layer 106 may be formedby the physical vapor deposition process, the chemical vapor depositionprocess, the coating process, other suitable processes, or a combinationthereof.

Thereafter, as shown in FIG. 11B, in accordance with some embodiments,the active layer 604, the drain electrode 606 a, and the sourceelectrode 606 b may be formed on the first insulating layer 106. In someembodiments, the active layer 604 may overlap with the gate electrode602 in a normal direction of the first substrate 102 (for example, the Zdirection shown in the figure). Furthermore, the drain electrode 606 aand the source electrode 606 b may be disposed on both sides of theactive layer 604, and the drain electrode 606 a and the source electrode606 b may partially cover the active layer 604. Here, the steps offorming the thin film transistor 600 is substantially completed.

In some embodiments, the active layer 604, the drain electrode 606 b,and the source electrode 606 a may be formed by the physical vapordeposition process, the chemical vapor deposition process, theelectroplating process, the electroless plating process, other suitableprocesses, or a combination thereof. In addition, in some embodiments,the drain electrode 606 a and the source electrode 606 b may bepatterned by a patterning process.

Next, referring to FIG. 11C, in accordance with some embodiments, anopening 402 p′ may be formed in the first insulating layer 106 and thebuffer layer 104, and the openings 402 p′ may extend from the topsurface of the first insulating layer 106 through the buffer layer 104to the top surface of the second conductive element 420. Moreover, theopening 402 p′ may expose a portion of the second conductive element420. In some embodiments, the opening 402 p′ may be formed in the firstinsulating layer 106 and the buffer layer 104 by a patterning process.

Next, referring to FIG. 11D, in accordance with some embodiments, aconductive material may be filled in the opening 402 p′ to form a via402′. In some embodiments, the drain electrode 606 a and the sourceelectrode 606 b may be formed together with the via 402′ by a patterningprocess. Furthermore, the material for forming the drain electrode 606 aand the source electrode 606 b may be the same as or different from thematerial for forming the via 402′. In some embodiments, the via 402′ maybe formed by the physical vapor deposition process, the chemical vapordeposition process, the electroplating process, the electroless platingprocess, other suitable processes, or a combination thereof.

In accordance with some embodiments, the second insulating layer 108 maybe formed on the first insulating layer 106 to cover the active layer604, the drain electrode 606 a, the source electrode 606 b, and the via402′. In some embodiments, the second insulating layer 108 may be formedby the physical vapor deposition process, the chemical vapor depositionprocess, the coating process, other suitable processes, or a combinationthereof.

Next, referring to FIG. 11E, in accordance with some embodiments, theopening 502 p and opening 402 p″ may be formed in the second insulatinglayer 108. The opening 502 p may extend from the top surface of thesecond insulating layer 108 to the top surface of the source electrode606 b. The opening 402 p″ may extend from the top surface of the secondinsulating layer 108 to the top surface of the via 402′. Furthermore,the opening 502 p may expose a portion of the source electrode 606 b,and the opening 402 p″ may expose a portion of the via 402′. In someembodiments, the opening 502 p and the opening 402 p″ may be formed inthe second insulating layer 108 by a patterning process.

Next, referring to FIG. 11F, in accordance with some embodiments, theconductive material may be filled in the opening 502 p and the opening402 p″ to form the via 502 and the via 402″, respectively. Furthermore,the material for forming the via 502 may be the same as or differentfrom the material for forming the via 402″. In some embodiments, the via502 and the via 402″ may be formed by the physical vapor depositionprocess, the chemical vapor deposition process, the electroplatingprocess, the electroless plating process, other suitable processes, or acombination thereof.

Next, in accordance with some embodiments, the phase shifter electrode500 and the feeding structure 400 (the feeding line 400 s) may be formedon the second insulating layer 108, and the phase shifter electrode 500may be in contact with the via 502, and the feeding line 400 s may be incontact with the via 402″. In some embodiments, in the normal directionof the first substrate 102 (for example, the Z direction shown in thefigure), the phase shifter electrode 500 may partially overlap with thesource electrode 606 b. In some embodiments, the phase shifter electrode500 may be formed together with the feeding line 400 s by a patterningprocess. In addition, the material for forming the phase shifterelectrode 500 and the feeding line 400 s may be the same as or differentfrom the material for forming the via 402″.

In some embodiments, the phase shifter electrode 500 and the feedingstructure 400 may be formed by the physical vapor deposition process,the chemical vapor deposition process, the electroplating process, theelectroless plating process, other suitable processes, or a combinationthereof. In addition, in some embodiments, the phase shifter electrode500 and the feeding structure 400 may be patterned by a patterningprocess.

It should be understood that, in this embodiment, the via structure forelectrically connecting the feeding line 400 s and the second conductiveelement 420 has a double-layer structure, i.e. the via 402′ and the via402″. However, in some other embodiments, the via structure forelectrically connecting the feeding line 400 s and the second conductiveelement 420 may have a single-layer structure, e.g., the via 402 shownin FIG. 10B. In the embodiments where the via structure has asingle-layer structure, the via that extends from the top surface of thesecond insulating layer 108 to the top surface of the second conductiveelement 420 may be formed in a single step.

Moreover, in some embodiments, the via 502 and the phase shifterelectrode 500 may be formed in the same step or different steps. In someembodiments, the via 402″ and the feeding structure 400 may be formed inthe same step or different steps. Furthermore, the phase shifterelectrode 500 and the feeding structure 400 may also be formed in thesame step or different steps.

Next, in accordance with some embodiments, the third insulating layer110 may be formed on the second insulating layer 108 and cover the phaseshifter electrode 500 and the feeding structure 400. Here, the steps forforming the first substrate 102 and the elements thereon aresubstantially completed. In some embodiments, the third insulating layer110 may be formed by the physical vapor deposition process, the chemicalvapor deposition process, the coating process, other suitable processes,or a combination thereof.

Next, refer to FIG. 12, which is a cross-sectional diagram of anelectronic device 10I in accordance with some embodiments of the presentdisclosure. The electronic device 10I shown in FIG. 12 is substantiallysimilar to the electronic device 10A shown in FIG. 1C. The differencebetween them includes that the thin film transistor 600 in theelectronic device 10A is a thin film transistor with bottom gate, andthe thin film transistor 600 in the electronic device 10I is a thin filmtransistor with top gate.

Specifically, as shown in FIG. 12, in this embodiment, the feedingstructure 400 and the phase shifter electrode 500 may be disposed on thesame layer in the cross-sectional structure. In this embodiment, boththe feeding structure 400 and the phase shifter electrode 500 may bedisposed on the second insulating layer 108. In this embodiment, thephase shifter electrode 500 may be disposed on different layers from thedrain electrode 606 a, the source electrode 606 b, and the gateelectrode 602 of the thin film transistor 600. In this embodiment, thephase shifter electrode 500 may be electrically connected to the sourceelectrode 606 b of the thin film transistor 600 through the via 502.

Next, refer to FIG. 13, which is a cross-sectional diagram of anelectronic device 10J in accordance with some embodiments of the presentdisclosure. As shown in FIG. 13, in this embodiment, the thin filmtransistor 600 may be a top gate thin film transistor. In thisembodiment, the feeding structure 400 and the phase shifter electrode500 may be disposed on different layers in the cross-sectionalstructure. Specifically, in this embodiment, the phase shifter electrode500 may be disposed on the first substrate 102, and the feedingstructure 400 may be disposed on the buffer layer 104.

In this embodiment, the drain electrode 606 a, the source electrode 606b, and the gate electrode 602 of the thin film transistor 600 aredisposed on different layers from the phase shifter electrode 500. Inthis embodiment, the phase shifter electrode 500 may be electricallyconnected to the source electrode 606 b of the thin film transistor 600through the via 502. In addition, in this embodiment, in the normaldirection of the first substrate 102 (for example, the Z direction shownin the figure), the feeding structure 400 may partially overlap with thephase shifter electrode 500.

Next, refer to FIG. 14, which is a cross-sectional diagram of anelectronic device 10K in accordance with some embodiments of the presentdisclosure. As shown in FIG. 14, in this embodiment, the thin filmtransistor 600 may be a top gate thin film transistor. In thisembodiment, the feeding structure 400 and the phase shifter electrode500 may be disposed on the same layer in the cross-sectional structure.Specifically, in this embodiment, both the phase shifter electrode 500and the feeding structure 400 may be disposed on the buffer layer 104.

In this embodiment, the phase shifter electrode 500 may also be disposedon the same layer as the drain electrode 606 a and the source electrode606 b of the thin film transistor 600. In some embodiments, the phaseshifter electrode 500 may also be disposed on the same layer as the scanline SL and/or the data line DL (not illustrated). In addition, in thisembodiment, the phase shifter electrode 500 may be in contact with thesource electrode 606 b.

Next, refer to FIG. 15, which is a cross-sectional diagram of anelectronic device 10L in accordance with some embodiments of the presentdisclosure. As shown in FIG. 15, in this embodiment, the thin filmtransistor 600 may be a thin film transistor with top gate. In thisembodiment, the feeding structure 400 and the phase shifter electrode500 may be disposed on the same layer in the cross-sectional structure.Specifically, in this embodiment, both the phase shifter electrode 500and the feeding structure 400 may be disposed on the first insulatinglayer 106.

In this embodiment, the phase shifter electrode 500 may also be disposedon the same layer as the gate electrode 602 of the thin film transistor600. In this embodiment, the drain electrode 606 a and the sourceelectrode 606 b of the thin film transistor 600 may be disposed ondifferent layers from the phase shifter electrode 500. In thisembodiment, the phase shifter electrode 500 may be electricallyconnected to the source electrode 606 b of the thin film transistor 600through the via 502.

Next, refer to FIG. 16, which is a cross-sectional diagram of anelectronic device 10M in accordance with some embodiments of the presentdisclosure. The electronic device 10M shown in FIG. 16 is substantiallysimilar to the electronic device 10A shown in FIG. 1C. The differencebetween them includes that the electronic device 10M further includes abarrier layer 700, and the barrier layer 700 may at least partiallyoverlap with the thin film transistor 600.

Specifically, as shown in FIG. 16, the barrier layer 700 may be disposedon the second insulating layer 108 and the barrier layer 700 may overlapwith the active layer 604 of the thin film transistor 600 in a normaldirection of the first substrate 102 (for example, the Z direction shownin the figure). In addition, in this embodiment, the barrier layer 700may be electrically connected to the fourth conductive layer 720 with aconstant potential through a via 702. In this embodiment, the fourthconductive layer 720 may be disposed on the first substrate 102. Inanother embodiment, the fourth conductive layer 720 may be disposed onthe buffer layer 104 or first insulating layer 106, but it is notlimited thereto. In this embodiment, the via 702 may extend from the topsurface of the second insulating layer 108 through the first insulatinglayer 106 and the buffer layer 104 to the top surface of the fourthconductive layer 720. Moreover, in this embodiment, in the normaldirection of the first substrate 102, the barrier layer 700 may notoverlap with the patch element 204.

In some embodiments, the material of the barrier layer 700, the via 702,and the fourth conductive layer 720 may include a metal conductivematerial, a transparent conductive material, or a combination thereof.The metal conductive material may include copper (Cu), silver (Ag), tin(Sn), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium(Cr), nickel (Ni), platinum (Pt), titanium (Ti), copper alloy, silveralloy, tin alloy, aluminum alloy, molybdenum alloy, tungsten alloy, goldalloy, chromium alloy, nickel alloy, platinum alloy, titanium alloy,other suitable conductive materials, or a combination thereof, but it isnot limited thereto. The transparent conductive material may include atransparent conductive oxide (TCO). For example, the transparentconductive oxide may include indium tin oxide (ITO), tin oxide (SnO),zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide(IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimonyzinc oxide (AZO), or a combination thereof, but it is not limitedthereto. In addition, the materials of the barrier layer 700, the via702, and the fourth conductive layer 720 may be the same or differentfrom each other.

In accordance with some embodiments, the potential of the barrier layer700 that is electrically connected to the fourth conductive layer 720may be the same as that of the patch element 204, thereby reducing riskof generating coupling capacitors of non-grounded metal wires on thefirst substrate 102.

Next, refer to FIG. 17, which is a cross-sectional diagram of anelectronic device 10N in accordance with some embodiments of the presentdisclosure. The electronic device 10N shown in FIG. 17 is substantiallysimilar to the electronic device 10M shown in FIG. 16. The differencebetween them includes that the fourth conductive layer 720 is disposedon the first insulating layer 106 in the electronic device 10N. In thisembodiment, the via 702 may extend from the top surface of the secondinsulating layer 108 through a portion of the second insulating layer108 to the top surface of the fourth conductive layer 720.

Next, refer to FIGS. 18A-18D, which are diagrams of circuit units of themodulation unit 100A of the electronic device in accordance with someembodiments of the present disclosure. As shown in FIG. 18A, in someembodiments, the modulation unit 100A may include the thin filmtransistor 600, and the thin film transistor 600 may be electricallyconnected to the scan line SL and the data line, and the thin filmtransistor 600 may be used to control the liquid crystal layer 300.

As shown in FIG. 18B, in some embodiments, the modulation unit 100A mayfurther include a storage capacitor Cst that is electrically connectedto the thin film transistor 600, and the storage capacitor Cst may beused to maintain a voltage.

Furthermore, as shown in FIGS. 18C and 18D, in some embodiments, themodulation unit 100A may further include another thin film transistor600′. Specifically, the phase shifter electrode 500 may be furtherelectrically connected with another thin film transistor 600′. In oneembodiment, in the electronic device, a quantity of the thin filmtransistors is greater than or equal to a quantity of the plurality ofphase shifter electrodes, but it is not limited thereto. In anotherembodiment, in one modulation unit 100A, a quantity of the thin filmtransistor is greater than or equal to a quantity of the plurality ofphase shifter electrodes, but not limited thereto. For example, onephase shifter electrode 500 may only electrically connected to one thinfilm transistor (e.g. the thin film transistor 600), or one phaseshifter electrode 500 may electrically connected to at least two thinfilm transistors (e.g. the thin film transistors 600 and 600′), but itis not limited thereto. In yet another embodiment, among the thin filmtransistor(s) and the phase shifter electrode(s) that electricallyconnected to the thin film transistor(s), a quantity of the thin filmtransistor is greater than or equal to a quantity of the plurality ofphase shifter electrodes, but it is not limited thereto. In someembodiments, the thin film transistor 600 and the thin film transistor600′ may be used as a driving element or a switching element. In someembodiments, the thin film transistor 600 and the thin film transistor600′ may be coupled to a compensation capacitor Comp to compensate thevoltage of the phase shifter electrode 500 to improve the voltagestabilization or charging performance.

To summarize the above, in accordance with some embodiments of thepresent disclosure, the electronic device that is provided includes thephase shifter electrode electrically connected to the thin filmtransistor. Compared with the phase shifter electrode array that iscontrolled using a passive driving element (for example, integratedcircuits and digital analog converters), the electronic device providedin the present disclosure can improve the problem of circuits couplingor short circuits that may be caused by insufficient wiring space, orreduce the complexity of the circuit or the power consumption of theelectronic device. In accordance with some embodiments, the problem ofreceiving inconsistent feeding voltages among different phase shifterelectrodes can be improved by using phase shifter electrodes that areeach electrically connected to the active driving element.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims. The features of the various embodiments can be used inany combination as long as they do not depart from the spirit and scopeof the present disclosure. Moreover, the scope of the presentapplication is not intended to be limited to the particular embodimentsof the process, machine, manufacture, composition of matter, means,methods and steps described in the specification. As one of ordinaryskill in the art will readily appreciate from the present disclosure,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.In addition, each claim constitutes an individual embodiment, and theclaimed scope of the present disclosure also includes the combinationsof the claims and embodiments. The scope of protection of presentdisclosure is subject to the definition of the scope of the appendedclaims.

What is claimed is:
 1. An electronic device, comprising: a firstsubstrate a second substrate; a liquid crystal layer disposed betweenthe first substrate and the second substrate; a feeding structuredisposed on the first substrate for transmitting a radio frequencysignal; and a plurality of phase shifter electrodes disposed on thefirst substrate, and at least one of the plurality of phase shifterelectrodes for receiving the radio frequency signal; wherein the atleast one of the plurality of phase shifter electrodes is electricallyconnected to a thin film transistor.
 2. The electronic device as claimedin claim 1, wherein the thin film transistor comprises an active layernot overlap with the at least one of the plurality of phase shifterelectrodes in a top-view direction of the electronic device.
 3. Theelectronic device as claimed in claim 2, wherein the active layer andthe at least one of the plurality of phase shifter electrodes areseparated by a distance, and the distance is in a range from 0.1 mm to100 mm.
 4. The electronic device as claimed in claim 1, wherein the thinfilm transistor comprises an active layer not overlap with the feedingstructure in a top-view direction of the electronic device.
 5. Theelectronic device as claimed in claim 4, wherein the active layer andthe feeding structure are separated by a distance, and the distance isin a range from 1 mm to 200 mm.
 6. The electronic device as claimed inclaim 1, further comprising a patch element disposed on the at least oneof the plurality of phase shifter electrodes, wherein the thin filmtransistor comprises an active layer not overlap with the patch elementin a top-view direction of the electronic device.
 7. The electronicdevice as claimed in claim 6, wherein the active layer and the patchelement are separated by a distance, and the distance is in a range from0.1 mm to 150 mm.
 8. The electronic device as claimed in claim 1,further comprising a plurality of patch elements respectively disposedon the plurality of phase shifter electrodes, wherein two adjacent patchelements are separated by a distance, and the distance is in a rangefrom 0.1 mm to 300 mm.
 9. The electronic device according to claim 1,wherein a quantity of the thin film transistor is greater than or equalto a quantity of the plurality of phase shifter electrodes.
 10. Theelectronic device as claimed in claim 1, further comprising a storagecapacitor electrically connected to the at least one of the plurality ofphase shifter electrodes.
 11. The electronic device as claimed in claim1, wherein the plurality of phase shifter electrodes are electricallyconnected to a thin film transistor respectively.
 12. The electronicdevice as claimed in claim 11, wherein the thin film transistor that iselectrically connected to the plurality of phase shifter electrodes eachcomprises an active layer, the active layers of two adjacent thin filmtransistors are separated by a distance, and the distance is in a rangefrom 0.1 mm to 300 nm.
 13. The electronic device as claimed in claim 1,wherein the thin film transistor is disposed between the liquid crystallayer and the first substrate.
 14. The electronic device as claimed inclaim 1, wherein the feeding structure comprises a feeding line, and anend portion of the feeding line is disposed opposite to an end of the atleast one of the plurality of phase shifter electrodes.
 15. Theelectronic device as claimed in claim 14, wherein the end portion of thefeeding line and the end portion of the at least one of the plurality ofphase shifter electrodes are separated by a distance, and the distanceis in a range from 0.05 mm to 5 mm.
 16. The electronic device as claimedin claim 14, wherein the feeding line is electrically connected to aconductive element through a via.
 17. The electronic device as claimedin claim 1, wherein the feeding structure and the at least one of theplurality of phase shifter electrodes are disposed on different layers.18. The electronic device as claimed in claim 17, wherein the feedingstructure partially overlaps with the at least one of the plurality ofphase shifter electrodes.
 19. The electronic device as claimed in claim1, further comprising a barrier layer partially overlapping with thethin film transistor.
 20. The electronic device as claimed in claim 19,wherein the barrier layer is electrically connected to a conductiveelement with a constant potential through a via.